I-CVD SiC Etching Ring

Incazelo emfushane:

I-CVD SiC Etching Ring evela ku-Semicera yakhelwe ukuhlangabezana nezidingo ezinzima zokwenziwa kwe-semiconductor. Iklanywe ngekhwalithi ephezulu ye-silicon carbide, le ndandatho yokufaka iqinisekisa ukusebenza okuphakeme ezinqubweni ezihlukahlukene zokuhlanganisa. I-Semicera ibeka phambili ukuqina nokunemba, okwenza i-etching yethu ibe yingxenye ebalulekile yanoma yiluphi uhlelo oluthuthukisiwe lwe-semiconductor.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Kungani i-Silicon Carbide ihlanganiswa?

I-CVD SiC Etching Ring evela ku-Semicera, isixazululo sokuqala esidizayinelwe izinqubo ezithuthukisiwe zokukhiqiza ama-semiconductor. Izindandatho zethu zokunamathisela zenziwe ngobuchule ukuze kuthuthukiswe ukusebenza kwamakhanda eshawa e-CVD SiC, kuqinisekiswe imiphumela emihle ngesikhathi senqubo yokusabalalisa. Ngokwakhiwa kwawo okuqinile nobunjiniyela obunembayo, lawa ma ringi ahlinzeka ngokwethembeka nokusebenza kahle okudingekayo ekusetshenzisweni kwekhwalithi ephezulu ye-etch etch.

Kwa-Semicera, siyayiqonda indima ebalulekile edlalwa yi-silicon carbide kubuchwepheshe be-semiconductor. Izindandatho zethu zokushumeka ze-CVD SiC zenzelwe ngokukhethekile ukuhlalisa izinqubo ezahlukahlukene, okuhlanganisa i-MOCVD namanye amasu okufaka. Ukwakheka okuqinile kwe-SiC kuqinisekisa ukuzinza okuhle kakhulu kokushisa nokumelana namakhemikhali, okwenza izindandatho zethu zokunamathisela zibe yinketho ekhethwayo yezindawo ezidinga kakhulu.

Ukuzibophezela kwethu ekusunguleni izinto ezintsha kanye nekhwalithi kuqinisekisa ukuthi indandatho ngayinye ye-CVD SiC etching ihlangabezana namazinga aphezulu embonini. Khetha i-Semicera yezixazululo zakho ezihlabayo futhi uzwe ukusebenza okungenakuqhathaniswa nokuqina okuhambisana nezidingo zakho ezihlukile. Ngobuchwepheshe bethu ku-SiC showerheads kanye nobuchwepheshe be-etching, silapha ukuze sisekele impumelelo yakho emkhakheni we-semiconductor.

Emkhakheni we-semiconductor, ukuzinza kwengxenye ngayinye kubaluleke kakhulu kuyo yonke inqubo. Kodwa-ke, endaweni enezinga eliphezulu lokushisa, i-graphite i-oxidized kalula futhi ilahleka, futhi ukugqoka kwe-SiC kunganikeza ukuvikeleka okuzinzile kwezingxenye ze-graphite. KweI-Semiceraithimba, sinemishini yethu yokucubungula ukuhlanzwa kwe-graphite, engalawula ukuhlanzeka kwegraphite ngaphansi kwe-5ppm. Ukuhlanzeka kwe-silicon carbide coating nakho kungaphansi kwe-5ppm.