Izinto Zokushisisa Ze-MOCVD Substrate

Izinto Zokushisisa Zesithombe Esifakiwe Se-MOCVD Substrate

Incazelo emfushane:

I-Semicera's Heating Elements ye-MOCVD Substrate yakhelwe ukunikeza ukulawulwa kwezinga lokushisa okunembayo nokuzinzile kuzinqubo ze-Metal-Organic Chemical Vapor Deposition (MOCVD). Eyenziwe nge-graphite yekhwalithi ephezulu, lezi zinto zokushisisa zinikeza i-thermal conductivity ehlukile, ukushisisa okufanayo, nokuthembeka kwesikhathi eside. Ilungele ukukhiqizwa kwe-semiconductor, ukukhiqizwa kwe-LED, nokusetshenziswa kwezinto ezithuthukisiwe, izinto zokushisisa ze-Semicera ziqinisekisa ukusebenza okungaguquki, zithuthukisa inqubo yakho ye-MOCVD substrate ukuze isebenze kahle kakhulu kanye nekhwalithi.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici eziyinhloko ze-heater graphite:

1. ukufana kwesakhiwo sokushisa.

2. conductivity enhle kagesi kanye nomthwalo omkhulu kagesi.

3. ukumelana nokugqwala.

4. i-inoxidizability.

5. ukuhlanzeka kwamakhemikhali aphezulu.

6. amandla aphezulu emishini.

Inzuzo iyonga amandla, inani eliphakeme kanye nokugcinwa okuphansi. Singakhiqiza i-anti-oxidation nempilo ende ye-graphite crucible, isikhunta se-graphite nazo zonke izingxenye ze-graphite heater.

I-MOCVD-Substrate-Heater-Heating-Elements-For-MOCVD3-300x300

Imingcele eyinhloko ye-graphite heater

Ukucaciswa Kwezobuchwepheshe	I-Semicera-M3
Ukuminyana kwenqwaba (g/cm3)	≥1.85
Okuqukethwe komlotha (PPM)	≤500
Ukuqina Kwasogwini	≥45
Ukumelana Okuqondile (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla Acindezelayo (Mpa)	≥70
Ubukhulu. Usayizi Wokusanhlamvu (μm)	≤43
I-Coefficient of Thermal Expansion Mm/°C	≤4.4*10-6