Izinto Zokushisisa Ze-MOCVD Substrate

Izinto Zokushisisa Zesithombe Esifakiwe Se-MOCVD Substrate

Incazelo emfushane:

Le nkampani Semicera Energy Technology Co., Ltd. ungumhlinzeki oholayo wezitsha zobumba ezithuthukisiwe ze-semiconductor futhi okuwukuphela komkhiqizi e-China ongahlinzeka ngasikhathi sinye ukuhlanzeka okuphezulu kwe-silicon carbide ceramic (ikakhulukaziKwenziwe kabusha SiC) kanye ne-CVD SiC enamathela. Ngaphezu kwalokho, inkampani yethu izibophezele nasezindaweni zobumba ezifana ne-alumina, i-aluminium nitride, i-zirconia, ne-silicon nitride, njll.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici eziyinhloko ze-heater graphite:

1. ukufana kwesakhiwo sokushisa.

2. conductivity enhle kagesi kanye nomthwalo omkhulu kagesi.

3. ukumelana nokugqwala.

4. i-inoxidizability.

5. ukuhlanzeka kwamakhemikhali aphezulu.

6. amandla aphezulu emishini.

Inzuzo iyonga amandla, inani eliphakeme kanye nokugcinwa okuphansi. Singakhiqiza i-anti-oxidation nempilo ende ye-graphite crucible, isikhunta se-graphite nazo zonke izingxenye ze-graphite heater.

I-MOCVD-Substrate-Heater-Heating-Elements-For-MOCVD3-300x300

Imingcele eyinhloko ye-graphite heater

Ukucaciswa Kwezobuchwepheshe	I-Semicera-M3
Ukuminyana kwenqwaba (g/cm3)	≥1.85
Okuqukethwe komlotha (PPM)	≤500
Ukuqina Kwasogwini	≥45
Ukumelana Okuqondile (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla Acindezelayo (Mpa)	≥70
Ubukhulu. Usayizi Wokusanhlamvu (μm)	≤43
I-Coefficient of Thermal Expansion Mm/°C	≤4.4*10-6