Ipuleti yenkampani ye-Silicon carbide RTA ye-semiconductor

Incazelo emfushane:

I-Silicon carbide iwuhlobo olusha lwe-ceramics olusebenza ngezindleko eziphakeme kanye nezakhiwo ezinhle kakhulu zezinto ezibonakalayo.Ngenxa yezici ezinjengamandla aphezulu nobulukhuni, ukumelana nokushisa okuphezulu, ukuguquguquka okukhulu kokushisa kanye nokumelana nokubola kwamakhemikhali, i-Silicon Carbide icishe imelane nayo yonke into yamakhemikhali.Ngakho-ke, i-SiC isetshenziswa kakhulu ezimayini zikawoyela, amakhemikhali, imishini kanye ne-airspace, ngisho namandla enuzi kanye nezempi banezidingo zabo ezikhethekile ku-SIC.Olunye uhlelo olujwayelekile esingalunikeza izindandatho zophawu lwepompo, i-valve nezikhali zokuzivikela njll.

Siyakwazi ukuklama nokwenza ngokuvumelana nobukhulu bakho obuthile ngekhwalithi enhle nesikhathi sokuletha esinengqondo.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.

Izici Eziyinhloko

1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu : kwenziwa ngokufakwa kwekhemikhali umhwamuko ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

Izakhiwo ze-SiC-CVD

Isakhiwo Sekristalu I-FCC β isigaba
Ukuminyana g/cm³ 3.21
Ukuqina Vickers ubulukhuni 2500
Usayizi Wokusanhlamvu μm 2~10
I-Chemical Purity % 99.99995
Amandla Okushisa J·kg-1 ·K-1 640
I-Sublimation Temperature 2700
Amandla E-Felexural I-MPa (RT 4-point) 415
I-Young's Modulus I-Gpa (4pt bend, 1300℃) 430
I-Thermal Expansion (CTE) 10-6K-1 4.5
I-Thermal conductivity (W/mK) 300
Semicera Indawo yokusebenza
Indawo yokusebenza ye-Semicera 2
Umshini wezinsimbi
Ukucutshungulwa kwe-CNN, ukuhlanza amakhemikhali, i-CVD coating
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