Emkhakheni wanamuhla wobuchwepheshe be-elekthronikhi, izinto zokwakha ze-semiconductor zidlala indima ebalulekile.Phakathi kwazo, i-silicon carbide (SiC) njenge-wide band gap semiconductor material, enezinzuzo zayo zokusebenza ezinhle kakhulu, ezifana nenkundla kagesi ephukile, isivinini esikhulu sokugcwala, ukuqhutshwa kwe-thermal, njll., kancane kancane igxila kubacwaningi nonjiniyela.I-silicon carbide epitaxial disk, njengengxenye yayo ebalulekile, ibonise amandla amakhulu okusebenza.
一, ukusebenza kwe-epitaxial disk: izinzuzo ezigcwele
1. Inkambu kagesi yokuphuka okuphezulu kakhulu: uma kuqhathaniswa nezinto ze-silicon zendabuko, inkambu kagesi ephukile ye-silicon carbide ingaphezu kwezikhathi ezingu-10.Lokhu kusho ukuthi ngaphansi kwezimo ezifanayo ze-voltage, amadivaysi e-elekthronikhi asebenzisa i-silicon carbide epitaxial disks angakwazi ukumelana nemisinga ephakeme, ngaleyo ndlela enze amadivaysi e-electronic high-voltage, high-frequency, amandla aphezulu.
2. Isivinini se-high-speed saturation: isivinini sokugcwala kwe-silicon carbide singaphezu kwezikhathi ezi-2 kune-silicon.Isebenza ekushiseni okuphezulu kanye nesivinini esikhulu, i-silicon carbide epitaxial disk yenza kangcono, okuthuthukisa kakhulu ukuzinza nokuthembeka kwamadivayisi kagesi.
3. Ukusebenza kahle okuphezulu kwe-thermal conductivity: i-thermal conductivity ye-silicon carbide ingaphezu kwezikhathi ezi-3 kune-silicon.Lesi sici sivumela amadivaysi e-elekthronikhi ukuthi ahlakaze kangcono ukushisa ngesikhathi sokusebenza kwamandla aphezulu okuqhubekayo, ngaleyo ndlela kuvinjwe ukushisa ngokweqile nokuthuthukisa ukuphepha kwedivayisi.
4. Ukuzinza kwamakhemikhali okuhle kakhulu: ezindaweni ezimbi kakhulu ezifana nokushisa okuphezulu, ukucindezela okuphezulu kanye nemisebe enamandla, ukusebenza kwe-silicon carbide kusalokhu kuzinzile njengangaphambili.Lesi sici senza i-silicon carbide epitaxial disk igcine ukusebenza okuhle kakhulu lapho ibhekene nezindawo eziyinkimbinkimbi.
二、inqubo yokukhiqiza: iqoshwe ngokucophelela
Izinqubo eziyinhloko zokukhiqiza i-SIC epitaxial disk zifaka i-physical vapor deposition (PVD), chemical vapor deposition (CVD) kanye nokukhula kwe-epitaxial.Ngayinye yalezi zinqubo inezici zayo futhi idinga ukulawula okunembile kwemingcele ehlukahlukene ukuze kuzuzwe imiphumela engcono kakhulu.
1. Inqubo ye-PVD: Ngokuhwamuka noma ukufafaza nezinye izindlela, i-SiC target ifakwa ku-substrate ukuze kwenziwe ifilimu.Ifilimu elungiselelwe ngale ndlela inokuhlanzeka okuphezulu kanye ne-crystallinity enhle, kodwa isivinini sokukhiqiza sihamba kancane.
2. Inqubo ye-CVD: Ngokuqhekeza igesi yomthombo we-silicon carbide ekushiseni okuphezulu, ifakwa ku-substrate ukuze yakhe ifilimu encane.Ukushuba nokufana kwefilimu okulungiselelwe yile ndlela kuyalawuleka, kodwa ubumsulwa kanye nekristalu kumpofu.
3. Ukukhula kwe-Epitaxial: ukukhula kongqimba lwe-SiC epitaxial ku-silicon ye-monocrystalline noma ezinye izinto ze-monocrystalline ngendlela yokubeka umhwamuko wamakhemikhali.Isendlalelo se-epitaxial esilungiselelwe yile ndlela sinokufanisa okuhle nokusebenza okuhle kakhulu nge-substrate material, kodwa izindleko ziphakeme kakhulu.
三、Ithemba lohlelo lokusebenza: Khanyisa ikusasa
Ngokuthuthuka okuqhubekayo kobuchwepheshe bamandla kagesi kanye nesidingo esikhulayo sokusebenza okuphezulu nokuthembeka okuphezulu kwemishini kagesi, i-silicon carbide epitaxial disk inethuba elibanzi lokufaka isicelo ekwenziweni kwedivayisi ye-semiconductor.Isetshenziswa kabanzi ekwakhiweni kwamadivayisi we-semiconductor yamandla aphezulu-imvamisa ephezulu, njengokushintshwa kwamandla kagesi, ama-inverters, ama-rectifiers, njll. Ngaphezu kwalokho, ibuye isetshenziswe kabanzi kumaseli elanga, i-LED nezinye izinkambu.
Ngezinzuzo zayo eziyingqayizivele zokusebenza kanye nokwenza ngcono okuqhubekayo kwenqubo yokukhiqiza, i-silicon carbide epitaxial disk kancane kancane ibonisa amandla ayo amakhulu emkhakheni we-semiconductor.Sinesizathu sokukholelwa ukuthi esikhathini esizayo sesayensi nobuchwepheshe, izodlala indima ebaluleke kakhulu.
Isikhathi sokuthumela: Nov-28-2023