【 Incazelo efingqiwe 】 Ku-C, N, B yesimanje kanye nezinye izinto zokusetshenziswa ezingezona ze-oxide eziphakeme ze-refractory, i-atmospheric pressure sintered silicon carbide ibanzi futhi iyonga, futhi kungathiwa isihlabathi esimery noma esiphikisayo.I-silicon carbide ehlanzekile iyikristalu esobala engenambala.Ngakho-ke siyini isakhiwo nezici ze-silicon carbide?
Isakhiwo esibonakalayo se-atmospheric pressure sintered silicon carbide:
I-atmospheric pressure sintered silicon carbide esetshenziswa embonini iphuzi ngokukhanyayo, eluhlaza, eluhlaza okwesibhakabhaka nokumnyama ngokohlobo nokuqukethwe kokungcola, futhi ubumsulwa buhlukile futhi ukucaca kuhlukile.I-silicon carbide crystal structure ihlukaniswe yaba yi-plutonium enamagama ayisithupha noma eyidayimane kanye ne-cubic plutonium-sic.I-Plutonium-sic yakha ukuguquguquka okuhlukahlukene ngenxa yokuhleleka okuhlukile kwama-athomu ekhabhoni ne-silicon esakhiweni sekristalu, futhi kutholwe izinhlobo ezingaphezu kuka-70 zokuguqulwa.i-beta-SIC iguqulela ku-alpha-SIC ngaphezu kuka-2100. Inqubo yezimboni ye-silicon carbide icwengwa ngesihlabathi se-quartz sekhwalithi ephezulu kanye ne-petroleum coke esithandweni sokumelana.Amabhulokhi e-silicon carbide acolisisiwe ayachotshozwa, ukuhlanzwa kwe-asidi-base, ukuhlukaniswa kazibuthe, ukuhlolwa noma ukukhethwa kwamanzi ukuze kukhiqizwe imikhiqizo ehlukahlukene yosayizi wezinhlayiyana.
Izici ezibonakalayo ze-atmospheric pressure sintered silicon carbide:
I-Silicon carbide inokuqina okuhle kwamakhemikhali, i-thermal conductivity, i-coefficient yokwandisa ukushisa, ukumelana nokugqoka, ngakho-ke ngaphezu kokusetshenziswa kwe-abrasive, kuningi ukusetshenziswa: Isibonelo, i-silicon carbide powder imbozwe odongeni lwangaphakathi lwe-turbine impeller noma i-cylinder block nge. inqubo ekhethekile, engathuthukisa ukumelana nokugqoka futhi yandise impilo ye-1 izikhathi ezingu-2.Yenziwe ngokumelana nokushisa, usayizi omncane, isisindo esincane, amandla aphezulu wezinto eziphikisayo zebanga eliphezulu, ukusebenza kahle kwamandla kuhle kakhulu.I-silicon carbide yezinga eliphansi (okuhlanganisa cishe no-85% SiC) iyi-deoxidizer enhle kakhulu yokwandisa isivinini sokwenza insimbi nokulawula kalula ukwakheka kwamakhemikhali ukuze kuthuthukiswe ikhwalithi yensimbi.Ngaphezu kwalokho, i-atmospheric pressure sintered silicon carbide nayo isetshenziswa kabanzi ekwenzeni izingxenye zikagesi zama-silicon carbon rods.
I-silicon carbide inzima kakhulu.Ukuqina kwe-Morse kungu-9.5, okwesibili ngemuva kwedayimane eliqinile lomhlaba (10), i-semiconductor ene-thermal conductivity enhle kakhulu, ingamelana ne-oxidation emazingeni okushisa aphezulu.I-Silicon carbide inezinhlobo okungenani ze-crystalline ezingama-70.I-Plutonium-silicon carbide iyi-isomer evamile eyenza emazingeni okushisa angaphezu kuka-2000 futhi inokwakheka kwekristalline ene-hexagonal (efana ne-wurtzite).I-silicon carbide e-sintered ngaphansi kwengcindezi yomoya
Ukusetshenziswa kwe-silicon carbide embonini ye-semiconductor
I-silicon carbide semiconductor industry chain ikakhulukazi ihlanganisa i-silicon carbide high-purity powder, i-crystal substrate eyodwa, ishidi le-epitaxial, izingxenye zamandla, ukupakishwa kwemojula kanye nezicelo zokugcina.
1. I-crystal substrate I-Single crystal substrate iyimpahla esekelayo ye-semiconductor, i-conductive material kanye ne-epitaxial growth substrate.Njengamanje, izindlela zokukhula ze-SiC single crystal zifaka indlela yokudlulisa umhwamuko womzimba (indlela ye-PVT), indlela yesigaba se-liquid (indlela ye-LPE), kanye nendlela yokubeka umhwamuko wamakhemikhali okushisa aphezulu (indlela ye-HTCVD).I-silicon carbide e-sintered ngaphansi kwengcindezi yomoya
2. Ishidi le-Epitaxial I-Silicon carbide epitaxial sheet, ishidi le-silicon carbide, ifilimu ye-crystal eyodwa (i-epitaxial layer) enesiqondiso esifanayo ne-substrate crystal enezidingo ezithile ze-silicon carbide substrate.Kuzinhlelo zokusebenza ezisebenzayo, amadivaysi e-wide band gap semiconductor cishe wonke akhiqizwa ungqimba lwe-epitaxial, futhi i-silicon chip ngokwayo isetshenziswa kuphela njenge-substrate, kuhlanganise ne-substrate ye-GaN epitaxial layer.
3. I-High-purity silicon carbide powder I-high-purity silicon carbide powder iyimpahla eluhlaza yokukhula kwe-silicon carbide ikristalu eyodwa ngendlela ye-PVT, futhi ukuhlanzeka komkhiqizo kuthinta ngokuqondile ikhwalithi yokukhula nezici zikagesi ze-silicon carbide single crystal.
4. Idivayisi yamandla ingamandla e-wide-band eyenziwe nge-silicon carbide impahla, enezici zokushisa okuphezulu, imvamisa ephezulu kanye nokusebenza kahle okuphezulu.Ngokusho kwendlela yokusebenza yedivayisi, idivayisi yokuhlinzeka amandla ka-SiC ikakhulukazi ihlanganisa i-diode yamandla kanye neshubhu lokushintsha amandla.
5. Itheminali Kuzinhlelo zokusebenza ze-semiconductor yesizukulwane sesithathu, ama-semiconductor e-silicon carbide anenzuzo yokuhambisana nama-gallium nitride semiconductors.Ngenxa yokusebenza kahle kokuguqulwa okuphakeme, izici zokushisa eziphansi, izinto ezingasindi kanye nezinye izinzuzo zamadivayisi we-SiC, isidingo semboni esezansi nomfula siyaqhubeka nokwanda, futhi kunomkhuba wokushintsha amadivayisi we-SiO2.
Isikhathi sokuthumela: Oct-16-2023