Njengamanje, izindlela zokulungiselela ze-SiC coating ikakhulukazi zifaka indlela ye-gel-sol, indlela yokushumeka, indlela yokugcoba ibhulashi, indlela yokufafaza nge-plasma, indlela yokusabela kwegesi yamakhemikhali (CVR) kanye nendlela yokubeka umhwamuko wamakhemikhali (CVD).
Indlela yokushumeka:
Le ndlela iwuhlobo lokushisa okuphezulu okuqinile kwesigaba sintering, esebenzisa ngokuyinhloko ingxube ye-Si powder kanye ne-C powder njengempushana yokushumeka, i-graphite matrix ifakwa kumpusha wokushumeka, futhi ukushisa okuphezulu kokushisa kwenziwa kwigesi ye-inert. , futhi ekugcineni i-SiC coating itholakala ebusweni be-graphite matrix.Inqubo ilula futhi inhlanganisela phakathi kwe-coating kanye ne-substrate inhle, kodwa ukufana kwe-coating eduze kwesiqondiso sogqinsi kubi, okulula ukukhiqiza izimbobo eziningi futhi kuholele ekuphikisweni okungalungile kwe-oxidation.
Indlela yokuhlanganisa ibhulashi:
Indlela yokwembathisa ibhulashi iwukuxubha uketshezi oluluhlaza ebusweni be-graphite matrix, bese welapha impahla eluhlaza ezingeni lokushisa elithile ukuze ulungise ukunamathela.Inqubo ilula futhi izindleko ziphansi, kodwa ukumboza okulungiselelwe indlela yokugcoba ibhulashi kubuthakathaka kuhlanganiswe ne-substrate, ukufana kwe-coating kubi, ukumboza kuncane futhi ukumelana ne-oxidation kuphansi, nezinye izindlela ziyadingeka ukusiza. yona.
Indlela yokufafaza nge-Plasma:
Indlela yokufafaza nge-plasma iwukufafaza ngokuyinhloko izinto ezingavuthiwe ezincibilikisiwe noma ezincibilike kancane ebusweni be-graphite matrix ngesibhamu se-plasma, bese uqina futhi ubophe ukuze wenze ukunamathela.Indlela ilula ukuyisebenzisa futhi ingalungisa uqweqwe oluminyene lwe-silicon carbide, kodwa i-silicon carbide elungiselelwe indlela ngokuvamile ibuthakathaka kakhulu futhi iholela ekuqineni kwe-oxidation, ngakho-ke isetshenziselwa ukulungiswa kwe-SiC composite coating ukuze kuthuthukiswe. ikhwalithi yokumboza.
Indlela ye-gel-sol:
Indlela yejeli-sol ngokuyinhloko iwukulungisa isixazululo se-sol esifana nesokukhanya esimboza ingaphezulu le-matrix, yome sibe ijeli bese siyayincibilika ukuze sithole okokunamathela.Le ndlela ilula ukuyisebenzisa futhi inezindleko eziphansi, kodwa ukumbozwa okukhiqiziwe kunokushiyeka okuthile njengokumelana nokushaqeka okuphansi okushisayo nokuqhekeka kalula, ngakho-ke akukwazi ukusetshenziswa kabanzi.
I-Chemical Gas Reaction (CVR) :
I-CVR ikhiqiza ngokuyinhloko ukunamathela kwe-SiC ngokusebenzisa impushana ye-Si ne-SiO2 ukuze ikhiqize isitimu se-SiO ezingeni lokushisa eliphezulu, futhi uchungechunge lokusabela kwamakhemikhali lwenzeka ebusweni be-substrate yezinto ezibonakalayo engu-C.Ukugqoka kwe-SiC okulungiselelwe ngale ndlela kuhlanganiswe eduze ne-substrate, kodwa izinga lokushisa lokusabela liphakeme futhi izindleko ziphakeme.
I-Chemical Vapor Deposition (CVD):
Njengamanje, i-CVD iwubuchwepheshe obuyinhloko bokulungiselela i-SiC coating endaweni engaphansi.Inqubo eyinhloko iwuchungechunge lokusabela ngokomzimba namakhemikhali wezinto ezisabelayo zesigaba segesi endaweni engaphansi, futhi ekugcineni ukunamathela kwe-SiC kulungiswa ngokubeka endaweni engaphansi.I-SiC enamathela elungiselelwe ubuchwepheshe be-CVD iboshwe eduze ebusweni be-substrate, engathuthukisa ngokuphumelelayo ukumelana ne-oxidation kanye nokumelana ne-ablative ye-substrate material, kodwa isikhathi sokubeka le ndlela side, futhi igesi yokusabela inobuthi obuthile. igesi.
Isikhathi sokuthumela: Nov-06-2023