Inqubo yokulungiselela ikristalu yembewu ekukhuleni kwekristalu eyodwa ye-SiC 3

Ukuqinisekisa Ukukhula
Ii-silicon carbide (SiC)amakristalu embewu alungiswa ngokulandela inqubo echaziwe futhi aqinisekiswa ngokukhula kwekristalu ye-SiC. Iplathifomu yokukhula esetshenzisiwe kwakuyisithando somlilo esithuthukisiwe se-SiC esinezinga lokushisa lokukhula lika-2200 ℃, ingcindezi yokukhula engu-200 Pa, kanye nesikhathi sokukhula samahora angu-100.

Ukulungiselela kuhilelekile aI-wafer ye-SiC engu-6 intshingobubili ubuso bekhabhoni nobesilicon bupholishiwe, aisilucwecwanaukufana kogqinsi okungu-≤10 µm, kanye nobulukhuni bobuso be-silicon obungu-≤0.3 nm. Ububanzi obungu-200 mm, iphepha le-graphite elingu-500 µm eliwugqinsi, kanye neglue, utshwala, nendwangu engena-lint nakho kwalungiswa.

IIsicwecwana se-SiCi-spin-coated nge-adhesive endaweni yokubopha imizuzwana engu-15 ku-1500 r/min.

I-adhesive ebusweni bokubopha kwe-Isicwecwana se-SiCyomiswa ngepuleti elishisayo.

Iphepha le-graphite kanyeIsicwecwana se-SiC(indawo ebophayo ibheke phansi) yapakishwa kusukela phansi kuya phezulu futhi yafakwa esithandweni somlilo se-crystal hot press. Ukucindezela okushisayo kwenziwa ngokwenqubo yokucindezela okushisayo esethiwe. Umfanekiso wesi-6 ubonisa indawo yekristalu yembewu ngemva kwenqubo yokukhula. Kuyabonakala ukuthi i-seed crystal surface ibushelelezi ngaphandle kwezimpawu ze-delamination, okubonisa ukuthi amakristalu embewu ye-SiC alungiselelwe kulolu cwaningo anekhwalithi enhle kanye nongqimba oluqinile lokubopha.

Isiphetho
Uma kucatshangelwa izindlela zamanje zokuhlanganisa nezindlela zokulenga zokulungiswa kwekristalu yembewu, kwahlongozwa indlela ehlanganisiwe yokuhlanganisa nokulenga. Lolu cwaningo lugxile ekulungiseleleni ifilimu ye-carbon kanyeisilucwecwana/graphite paper bonding inqubo edingekayo kule ndlela, okuholela eziphethweni ezilandelayo:

I-viscosity ye-adhesive edingekayo yefilimu yekhabhoni ku-wafer kufanele ibe ngu-100 mPa·s, nezinga lokushisa le-carbonization elingu-≥600℃. Imvelo ekahle ye-carbonization iyindawo evikelwe nge-argon. Uma kwenziwa ngaphansi kwezimo ze-vacuum, idigri ye-vacuum kufanele ibe ngu-≤1 Pa.

Kokubili izinqubo ze-carbonization kanye ne-bonding zidinga ukuphulukiswa kwezinga lokushisa eliphansi kwe-carbonization kanye nezinamathelisi ezibophayo endaweni eyiwafa ukuze kuxoshwe amagesi kokunamathelayo, kuvimbele ukuxebuka nokungabi nasici kungqimba oluyisibopho ngesikhathi se-carbonization.

I-adhesive ehlanganisayo yephepha le-wafer/graphite kufanele ibe ne-viscosity engu-25 mPa·s, nengcindezi yokubopha engu-≥15 kN. Phakathi nenqubo yokuhlanganisa, izinga lokushisa kufanele likhushulwe kancane kancane ebangeni lezinga lokushisa eliphansi (<120℃) ngaphezu kwamahora angu-1.5. Ukuqinisekiswa kokukhula kwekristalu ye-SiC kuqinisekisile ukuthi amakristalu embewu ye-SiC alungisiwe ahlangabezana nezidingo zokukhula kwekristalu ye-SiC yekhwalithi ephezulu, enezindawo ezibushelelezi zekristalu yembewu futhi akukho mvula.