Ama-wafers e-SOI

Incazelo emfushane:

I-wafer ye-SOI iyisakhiwo esifana nesemishi esinezingqimba ezintathu;Kubandakanya isendlalelo esiphezulu (ungqimba lwedivayisi), maphakathi nesendlalelo se-oksijini egqitshiwe (yesendlalelo se-SiO2 esivikelayo) kanye ne-substrate engezansi (i-silicon eyinqwaba).Ama-wafers e-SOI akhiqizwa kusetshenziswa indlela ye-SIMOX kanye nobuchwepheshe be-wafer bonding, obuvumela izendlalelo zedivayisi ezizacile nezinembe kakhudlwana, ukujiya komfaniswano kanye nokuminyana kwesici esiphansi.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ama-SOI Wafers(1)

Inkambu yohlelo lokusebenza

1. Isifunda esididiyelwe esinesivinini esiphezulu

2. Amadivayisi we-Microwave

3. Isifunda esihlanganisiwe sokushisa okuphezulu

4. Imishini yamandla

5. Isifunda esihlanganisiwe samandla aphansi

6. MEMS

7. Isifunda esihlanganisiwe se-voltage ephansi

Into		Ukuphikisana
Sekukonke	I-Wafer Diameter 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Umnsalo/I-Warp 翘曲度(	<10um
	Izinhlayiya 颗粒度(	0.3um <30ea
	Amafulethi/Notch 定位边/定位槽	I-Flat noma i-Notch
	Ukukhishwa komkhawulo 边缘去除(mm)	/
Isendlalelo Sedivayisi 器件层	Uhlobo/I-Dopant yesendlalelo sedivayisi 器件层掺杂类型	I-N-Type/P-Type B/P/Sb/Njengoba
	Ukuma kwesendlalelo sedivayisi 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Ukuqina Kwesendlalelo Sedivayisi 器件层厚度(um)	0.1 ~ 300um
	Ukumelana Nesendlalelo Sedivayisi 器件层电阻率(ohm•cm)	0.001~100,000 ohm-cm
	Izinhlayiya Zesendlalelo Sedivayisi 器件层颗粒度(	<30ea@0.3
	I-TTV Yesendlalelo Sedivayisi 器件层TTV(	<10um
	Isendlalelo Sedivayisi Qeda 器件层表面处理	Ipholishiwe
IBHOKISI	Ukuqina Kwe-Oxide Engcwatshiwe 埋氧层厚度(um)	50nm(500Å)~15um
Isendlalelo seHandle 衬底	Bamba I-Wafer Type/Dopant 衬底层类型	I-N-Type/P-Type B/P/Sb/Njengoba
	Phatha i-Wafer Orientation 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Bamba i-Wafer Resistivity 衬底电阻率(ohm•cm)	0.001~100,000 ohm-cm
	Bamba Ukuqina Kwe-wafer 衬底厚度(um)	> 100um
	Bamba i-Wafer Qeda 衬底表面处理	Ipholishiwe
Ama-wafers e-SOI emininingwane eqondiwe angenziwa ngokwezifiso ngokuya ngezidingo zamakhasimende.