Njengenye yezingxenye ezibalulekile zeImishini ye-MOCVD, isisekelo se-graphite singumzimba ophethe kanye nokushisa we-substrate, enquma ngokuqondile ukufana nokuhlanzeka kwezinto zefilimu, ngakho ikhwalithi yayo ithinta ngokuqondile ukulungiswa kweshidi le-epitaxial, futhi ngesikhathi esifanayo, nokwanda kwenani ukusetshenziswa kanye nokushintsha kwezimo zokusebenza, kulula kakhulu ukugqoka, okuyingxenye yezinto ezisetshenziswayo.
Nakuba i-graphite ine-conductivity enhle kakhulu yokushisa nokuzinza, inenzuzo enhle njengengxenye yesisekeloImishini ye-MOCVD, kodwa ekukhiqizeni, i-graphite izogqwala i-powder ngenxa yezinsalela zamagesi abhubhisayo kanye ne-metallic organics, futhi impilo yesevisi yesisekelo se-graphite izoncishiswa kakhulu.Ngesikhathi esifanayo, i-graphite powder ewayo izobangela ukungcola ku-chip.
Ukuvela kobuchwepheshe bokugqoka kungahlinzeka ngokulungiswa kwe-powder ebusweni, kuthuthukise ukuqhutshwa kokushisa, nokulinganisa ukusatshalaliswa kokushisa, okuye kwaba ubuchwepheshe obuyinhloko bokuxazulula le nkinga.Isisekelo se-graphite ngaphakathiImishini ye-MOCVDukusetshenziswa imvelo, graphite base surface enamathela kufanele ukuhlangabezana izici ezilandelayo:
(1) Isisekelo segraphite singagoqwa ngokugcwele, futhi ukuminyana kuhle, ngaphandle kwalokho isisekelo segraphite kulula ukugqwala egesini edlayo.
(2) Amandla okuhlanganisa nesisekelo segraphite aphakeme ukuze kuqinisekiswe ukuthi ukunamathela akulula ukuwa ngemva kwezinga lokushisa eliphakeme eminingana kanye nemijikelezo yokushisa ephansi.
(3) Inokuqina okuhle kwamakhemikhali ukuze kugwenywe ukwehluleka ukunamathela endaweni yokushisa ephezulu kanye nomoya ogqwalayo.
I-SiC inezinzuzo zokumelana nokugqwala, ukuguquguquka okuphezulu kokushisa, ukumelana nokushaqeka okushisayo kanye nokuzinza okuphezulu kwamakhemikhali, futhi ingasebenza kahle emkhathini we-GaN epitaxial.Ukwengeza, i-coefficient yokwandisa okushisayo ye-SiC ihluke kancane kakhulu kuleyo ye-graphite, ngakho-ke i-SiC iyinto ekhethwayo yokumbozwa kwendawo ye-graphite base.
Njengamanje, i-SiC evamile iwuhlobo lwe-3C, 4H no-6H, futhi ukusetshenziswa kwe-SiC kwezinhlobo ze-crystal ezahlukene kuhlukile.Isibonelo, i-4H-SiC ingakha amadivaysi anamandla amakhulu;I-6H-SiC iyisimeme kunazo zonke futhi ingakha amadivaysi kagesi wezithombe;Ngenxa yesakhiwo sayo esifanayo ne-GaN, i-3C-SiC ingasetshenziselwa ukukhiqiza ungqimba lwe-GaN epitaxial nokwenza amadivayisi we-SiC-GaN RF.I-3C-SiC yaziwa nangokuthiβ-SiC, kanye nokusetshenziswa okubalulekile kweβ-I-SiC injengefilimu nezinto zokugqoka, ngakho-keβ-SiC okwamanje impahla main for enamathela.
Isikhathi sokuthumela: Nov-06-2023