Inqubo yokukhiqiza i-silicon carbide wafer

Isicwecwana se-silicon carbideyenziwe ngempushana ye-silicon ehlanzekile kanye ne-high purity carbon powder njengezisetshenziswa zokusetshenziswa, kanti i-silicon carbide crystal ikhuliswa ngendlela yokudlulisa umhwamuko obonakalayo (PVT), bese icutshungulwa ibeisikhwama se-silicon carbide.

1.I-Raw material synthesis:

Ukuhlanzeka okuphezulu kwe-silicon powder kanye nokuhlanzeka okuphezulu kwe-carbon powder kwaxutshwa ngokwesilinganiso esithile, futhi izinhlayiya ze-silicon carbide zahlanganiswa ekushiseni okuphezulu ngaphezu kuka-2,000 ℃. Ngemuva kokuchotshozwa, ukuhlanzwa nezinye izinqubo, izinto zokusetshenziswa kwe-silicon carbide powder eluhlaza ezihlangabezana nezidingo zokukhula kwekristalu ziyalungiswa.

2.Ukukhula kwekristalu:

Kusetshenziswa impushana ye-SIC ehlanzekile njengezinto ezingavuthiwe, ikristalu yakhuliswa ngendlela yokudlulisa umhwamuko (PVT) kusetshenziswa isithando somlilo esizithuthukisa ngokwaso.

3.ingot processing:

I-silicon carbide crystal ingot etholwe iqondiswe yi-X-ray single crystal orientator, yabe isigaywa futhi yagoqwa, futhi yacutshungulwa yaba yikristalu yobubanzi obujwayelekile be-silicon carbide.

4.I-Crystal cutting:

Kusetshenziswa imishini yokusika enemigqa eminingi, amakristalu e-silicon carbide asikwa abe amashidi amancane anogqinsi olungekho ngaphezu kwe-1mm.

5. Ukugaya i-chip:

I-wafer igaywa ibe isicaba nobulukhuni obufunekayo ngoketshezi lokugaya idayimane lobukhulu bezinhlayiyana ezihlukene.

6.Ukupholishwa kwe-chip:

I-silicon carbide epholishiwe ngaphandle kokulimala kwendawo yatholwa ngokupholisha ngomshini nokupholisha ngamakhemikhali.

7.Ukutholwa kwe-chip:

Sebenzisa isibonakhulu esibonakalayo, i-X-ray diffractometer, isibonakhulu samandla e-athomu, isihloli esingathinteki sokungathinteki, isihloli sokukhanya kwendawo, isihloli esihlanganisa ukukhubazeka nezinye izinto zokusebenza ukuze kutholwe ukuminyana kwe-microtubule, ikhwalithi yekristalu, ukuhwashala komhlaba, ukumelana, i-warpage, ukugoba, ukushintsha kogqinsi, ukuklwebheka kwendawo kanye neminye imingcele ye-silicon carbide wafer. Ngokwalokhu, izinga lekhwalithi ye-chip linqunywa.

8. Ukuhlanza i-chip:

Ishidi lokupholisha le-silicon carbide lihlanzwa nge-ejenti yokuhlanza kanye namanzi ahlanzekile ukuze kukhishwe uketshezi lokupholisha olusele kanye nokunye ukungcola okungaphezulu eshidini lokupholisha, bese i-wafer ishaywa futhi inyakaziswe yomile nge-ultra-high purerity nitrogen kanye nomshini wokomisa; I-wafer igoqwe ebhokisini leshidi elihlanzekile ekamelweni elihlanzeke kakhulu ukuze kwakhiwe isicwecwana esiyi-silicon carbide esilungele ukusetshenziswa ezansi nomfula.

Uma usayizi we-chip umkhulu, kuba nzima kakhulu ukukhula kwekristalu okuhambisanayo nobuchwepheshe bokucubungula, futhi kuya phezulu ukusebenza kahle kokukhiqiza kwamadivayisi awela phansi, kunciphisa izindleko zeyunithi.