I-Semicera ihlinzeka ngezingubo ezikhethekile ze-tantalum carbide (TaC) zezingxenye ezihlukahlukene nabathwali.Inqubo yokugqoka ehamba phambili ye-Semicera yenza i-tantalum carbide (TaC) ikwazi ukufeza ukuhlanzeka okuphezulu, ukuzinza okuphezulu kwezinga lokushisa kanye nokubekezelelana kwamakhemikhali aphezulu, ukuthuthukisa ikhwalithi yomkhiqizo wamakristalu e-SIC/GAN kanye nezendlalelo ze-EPI (I-Graphite embozwe nge-TaC susceptor), kanye nokwelula impilo yezingxenye ezibalulekile ze-reactor. Ukusetshenziswa kwe-tantalum carbide TaC coating ukuxazulula inkinga enqenqemeni nokwenza ngcono ikhwalithi yokukhula kwekristalu, futhi i-Semicera iphumelele ekuxazululeni ubuchwepheshe be-tantalum carbide coating (CVD), yafinyelela ezingeni eliphezulu lamazwe ngamazwe.
Ngemva kweminyaka yokuthuthuka, i-Semicera inqobe ubuchwepheshe beI-CVD TaCngemizamo ehlanganyelwe yomnyango we-R&D. Ukukhubazeka kulula ukwenzeka enqubweni yokukhula kwama-wafers e-SiC, kodwa ngemva kokusebenzisaI-TaC, umehluko ubalulekile. Ngezansi ukuqhathaniswa kwamawafa ane-TaC nangenayo, kanye nezingxenye ze-Semicera zokukhula kwekristalu eyodwa.
nge-TaC nangaphandle kwayo
Ngemva kokusebenzisa i-TaC (kwesokudla)
Ukwengeza, impilo yesevisi yemikhiqizo yokumboza ye-TaC ye-Semicera yinde futhi imelana kakhulu nezinga lokushisa eliphezulu kunaleyo yokunamathela kwe-SiC. Ngemva kwesikhathi eside sedatha yokulinganisa ilabhorethri, i-TaC yethu ingasebenza isikhathi eside ezingeni eliphakeme lika-2300 degrees Celsius. Alandelayo amanye amasampula ethu:
(a) Umdwebo ohleliwe wensiza ekhulayo ye-SiC single crystal ingot ngendlela ye-PVT (b) Ubakaki wembewu ohlanganiswe ne-TaC ephezulu (okuhlanganisa nembewu ye-SiC) (c) indandatho ye-graphite ehlanganiswe ne-TAC
