Incazelo
I-Semicera GaN Epitaxy Carrier yakhelwe ngokucophelela ukuze ihlangabezane nezidingo eziqinile zokukhiqizwa kwe-semiconductor yesimanje. Ngesisekelo sezinto zokwakha zekhwalithi ephezulu nobunjiniyela obunembayo, le nkampani yenethiwekhi igqama ngenxa yokusebenza kwayo okukhethekile nokuthembeka. Ukuhlanganiswa kwe-Chemical Vapor Deposition (CVD) Silicon Carbide (SiC) enamathelayo kuqinisekisa ukuqina okuphakeme, ukusebenza kahle kokushisa, nokuvikelwa, okwenza kube ukukhetha okuncanyelwayo kochwepheshe bemboni.
Izici Eziyinhloko
1. Ukuqina OkuyingqayiziveleUkufakwa kwe-CVD SiC ku-GaN Epitaxy Carrier kuthuthukisa ukumelana kwayo nokuguga, kunwebe kakhulu impilo yayo yokusebenza. Lokhu kuqina kuqinisekisa ukusebenza okungaguquki ngisho nasezindaweni zokukhiqiza ezidingekayo, kunciphisa isidingo sokushintshwa nokugcinwa njalo.
2. I-Superior Thermal EfficiencyUkuphatha okushisayo kubalulekile ekukhiqizeni ama-semiconductor. Izici zokushisa ezithuthukisiwe ze-GaN Epitaxy Carrier zenza kube lula ukulahlwa kokushisa okuphumelelayo, ukulondoloza izimo zokushisa ezilungile phakathi nenqubo yokukhula kwe-epitaxial. Lokhu kusebenza kahle akuthuthukisi nje kuphela ikhwalithi yama-wafers we-semiconductor kodwa futhi kuthuthukisa ukusebenza kahle kokukhiqiza kukonke.
3. Amakhono OkuvikelaI-SiC coating ihlinzeka ngokuvikeleka okuqinile ekulimaleni kwamakhemikhali nokushaqeka okushisayo. Lokhu kuqinisekisa ukuthi ubuqotho benkampani yenethiwekhi buyagcinwa kuyo yonke inqubo yokukhiqiza, kuvikelwe izinto ezithambile ze-semiconductor futhi kuthuthukisa isivuno nokuthembeka kwenqubo yokukhiqiza.
Imininingwane Yobuchwepheshe :
Izicelo:
I-Semicorex GaN Epitaxy Carrier ilungele izinqubo ezahlukahlukene zokukhiqiza ze-semiconductor, okuhlanganisa:
• Ukukhula kwe-GaN epitaxial
• Izinqubo ze-semiconductor yezinga lokushisa eliphezulu
• I-Chemical Vapor Deposition (CVD)
• Ezinye izinhlelo zokusebenza ezithuthukisiwe zokukhiqiza i-semiconductor