I-Graphite Susceptor ene-Silicon Carbide Coating Wafer Carrier

Incazelo emfushane:

I-Semicera inikeza uhla olubanzi lwezixhumi nezinto ze-graphite eziklanyelwe ama-epitaxy reactor ahlukahlukene.

Ngobambiswano lwamasu nama-OEM ahamba phambili embonini, ubungcweti bezinto ezibonakalayo, namandla okukhiqiza athuthukile, i-Semicera iletha imiklamo eklanyelwe ukuhlangabezana nezidingo ezithile zohlelo lwakho lokusebenza. Ukuzibophezela kwethu ekusebenzeni kahle kuqinisekisa ukuthi uthola izixazululo eziphelele zezidingo zakho ze-epitaxy reactor.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo

I-CVD-SiC enamathela inezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ephilayo, enezakhiwo ezinzile ngokomzimba namakhemikhali.
Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.
Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.

I-FDVCDV

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Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.

Isicelo

Izici Eziyinhloko

1 .Ukuhlanzeka okuphezulu kwe-SiC ehlanganiswe ne-graphite

2. Ukumelana nokushisa okuphezulu & ukufana okushisayo

3. Ikristalu ye-SiC ecwebezelayo efakwe endaweni ebushelelezi

4. Ukuqina okuphezulu ngokumelene nokuhlanza amakhemikhali

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coatings

I-SiC-CVD
Ukuminyana	(g/cc)	3.21
Amandla e-Flexural	(Mpa)	470
Ukunwetshwa kwe-thermal	(10-6/K)	4
I-Thermal conductivity	(W/mK)	300

Ukupakisha Nokuthumela

Ikhono Lokuhlinzeka:
10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo: