Incazelo
Inkampani yethu ihlinzekaUkufakwa kwe-SiCizinqubo zezinsizakalo ebusweni be-graphite, izitsha zobumba nezinye izinto ngendlela ye-CVD, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon akwazi ukusabela ekushiseni okuphezulu ukuze athole ama-molecule e-Sic ahlanzekile kakhulu, angafakwa phezu kwezinto ezimboziwe ukuze enzeIsendlalelo sokuvikela se-SiCyohlobo lwe-epitaxy barrel i-hy pnotic.
Izici Eziyinhloko
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu : kwenziwa ngokufakwa kwekhemikhali umhwamuko ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating
Izakhiwo ze-SiC-CVD | ||
Isakhiwo Sekristalu | I-FCC β isigaba | |
Ukuminyana | g/cm³ | 3.21 |
Ukuqina | Vickers ubulukhuni | 2500 |
Usayizi Wokusanhlamvu | μm | 2~10 |
I-Chemical Purity | % | 99.99995 |
Amandla Okushisa | J·kg-1 ·K-1 | 640 |
I-Sublimation Temperature | ℃ | 2700 |
Amandla E-Felexural | I-MPa (RT 4-point) | 415 |
I-Young's Modulus | I-Gpa (4pt bend, 1300℃) | 430 |
I-Thermal Expansion (CTE) | 10-6K-1 | 4.5 |
I-Thermal conductivity | (W/mK) | 300 |
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