I-Silicon Carbide SiC Coated Heaters

Incazelo emfushane:

I-silicon carbide heater inamethwe nge-metal oxide, okungukuthi, ipuleti le-silicon carbide likapende elikude le-infrared njengengxenye ye-radiation, embotsheni ye-elementi (noma umgodi) ocingweni lokushisisa kagesi, ngaphansi kwepuleti le-silicon carbide beka ukuqina okushubile, okuphikisayo. , impahla yokushisa ukushisa, bese ifakwa egobolondweni lensimbi, i-terminal ingasetshenziswa ukuxhuma ukunikezwa kwamandla.

Lapho umsebe we-infrared kude we-silicon carbide heater ukhanya entweni, ungamunca, ubonise futhi udlule. Izinto ezishisiwe nezomisiwe zithatha amandla emisebe ye-infrared kude ekujuleni okuthile kwama-molecule angaphakathi nangaphezulu ngesikhathi esifanayo, okukhiqiza umphumela wokuzifudumeza, ukuze i-solvent noma ama-molecule amanzi ahwamuke futhi ashise ngokulinganayo, ngaleyo ndlela agweme ukuguquguquka nokushintsha kwekhwalithi. ngenxa yamazinga ahlukene okwanda okushisayo, ukuze ukubukeka kwezinto ezibonakalayo, izakhiwo zomzimba nezomshini, ukusheshisa nombala kuhlale kuqinile.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.

Izici Eziyinhloko

1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

Izakhiwo ze-SiC-CVD
Isakhiwo Sekristalu	I-FCC β isigaba
Ukuminyana	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Usayizi Wokusanhlamvu	μm	2~10
I-Chemical Purity	%	99.99995
Amandla Okushisa	J·kg-1 ·K-1	640
I-Sublimation Temperature	℃	2700
Amandla E-Felexural	I-MPa (RT 4-point)	415
I-Modulus Encane	I-Gpa (4pt bend, 1300℃)	430
I-Thermal Expansion (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300