Incazelo
Inkampani yethu ihlinzekaUkufakwa kwe-SiCizinqubo ze-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bomhlaba.emboziweizinto zokwakha, ukwakha isendlalelo sokuzivikela se-SIC.
Izici ze-SiC shower heads zimi kanje:
1. Ukumelana nokugqwala: Impahla ye-SiC inokumelana nokugqwala okuhle kakhulu futhi ingamelana nokuguguleka koketshezi oluhlukahlukene lwamakhemikhali nezisombululo, futhi ifanele izinqubo ezihlukahlukene zokucutshungulwa kwamakhemikhali kanye nezinqubo zokwelashwa kwendawo.
2. Izinga lokushisa eliphakeme:Imibhobho ye-SiCingagcina ukuqina kwesakhiwo ezindaweni zokushisa okuphezulu futhi ifanele izinhlelo zokusebenza ezidinga ukwelashwa okushisa okuphezulu.
3. Ukufafaza okufanayo:I-nozzle ye-SiCidizayini inokusebenza okuhle kokulawula ukufutha, okungafinyelela ukusatshalaliswa koketshezi okufanayo nokuqinisekisa ukuthi uketshezi lokwelapha lumbozwe ngokulinganayo endaweni okuhlosiwe.
4. Ukumelana nokugqoka okuphezulu: Impahla ye-SiC inobunzima obuphezulu nokumelana nokugqoka futhi ingamelana nokusetshenziswa isikhathi eside nokungqubuzana.
Amakhanda eshawa e-SiC asetshenziswa kabanzi ezinqubweni zokwelashwa kwe-liquid ekukhiqizeni i-semiconductor, ukucubungula amakhemikhali, ukumboza phezulu, i-electroplating kanye neminye imikhakha yezimboni. Ingahlinzeka ngemiphumela ezinzile, efanayo futhi enokwethenjelwa yokufafaza ukuze kuqinisekiswe ikhwalithi nokuvumelana kokucubungula nokwelashwa.
Izici Eziyinhloko
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating
| Izakhiwo ze-SiC-CVD | ||
| Isakhiwo Sekristalu | I-FCC β isigaba | |
| Ukuminyana | g/cm³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Usayizi Wokusanhlamvu | μm | 2~10 |
| I-Chemical Purity | % | 99.99995 |
| Amandla Okushisa | J·kg-1 ·K-1 | 640 |
| I-Sublimation Temperature | ℃ | 2700 |
| Amandla E-Felexural | I-MPa (RT 4-point) | 415 |
| I-Modulus Encane | I-Gpa (4pt bend, 1300℃) | 430 |
| I-Thermal Expansion (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
