Ama-Silicon Carbide Substrates|SiC Wafers

I-Silicon Carbide Substrates|SiC Wafers Isithombe Esifakiwe

Incazelo emfushane:

I-WeiTai Energy Technology Co., Ltd. ingumphakeli ohamba phambili ogxile ekusetshenzisweni kwe-wafer kanye ne-semiconductor ethuthukisiwe.Sizinikezele ekuhlinzekeni ngemikhiqizo yekhwalithi ephezulu, ethembekile, kanye nentsha ekukhiqizeni ama-semiconductor, imboni ye-photovoltaic nezinye izinkambu ezihlobene.

Umugqa wethu womkhiqizo uhlanganisa imikhiqizo ye-graphite ehlanganiswe ne-SiC/TaC nemikhiqizo yobumba, ehlanganisa izinto ezihlukahlukene ezifana ne-silicon carbide, i-silicon nitride, ne-aluminium oxide nokunye.

Njengamanje, siwukuphela komkhiqizi ohlinzeka ngokuhlanzeka kwe-SiC 99.9999% kanye ne-99.9% ye-silicon carbide eyenziwe kabusha.Ubude bokunamathela be-SiC obukhulu singenza ama-2640mm.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon carbide (SiC) i-crystal material eyodwa inobubanzi begebe lebhande elikhulu (~Si izikhathi ezi-3), ukuguquguquka okuphezulu kwe-thermal (~Si izikhathi ezingu-3.3 noma izikhathi ze-GaAs izikhathi ezingu-10), izinga lokufuduka kwe-electron ephezulu (~Si izikhathi ezingu-2.5), ukuphuka okuphezulu kukagesi inkambu (~Si 10 izikhathi noma GaAs izikhathi 5) kanye nezinye izici ezivelele.

Amadivayisi e-SiC anezinzuzo ezingenakubuyiseleka endaweni yokushisa okuphezulu, ukucindezela okuphezulu, imvamisa ephezulu, izinto zikagesi ezinamandla aphezulu kanye nezicelo zemvelo ezeqisayo ezifana ne-aerospace, amasosha, amandla enuzi, njll., akha amaphutha ezinto ezibonakalayo ze-semiconductor yendabuko ekusebenzeni. izinhlelo zokusebenza, futhi kancane kancane ziba inkomba yama-semiconductors amandla.

Imininingwane ye-4H-SiC Silicon carbide substrate

Into项目	Imininingwane参数
I-Polytype 晶型	4H -SiC	6H-SiC
Ububanzi 晶圆直径	2 intshi \|3 intshi \|4 intshi \|6inch	2 intshi \|3 intshi \|4 intshi \|6inch
Ubukhulu 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
I-Conductivity 导电类型	N – uhlobo / Semi-insulating N型导电片/ 半绝缘片	N – uhlobo / Semi-insulating N型导电片/ 半绝缘片
I-Dopant 掺杂剂	I-N2 (Nitrogen)V (Vanadium)	I-N2 (Nitrogen) V (Vanadium)
Ukuqondisa 晶向	Ku-eksisi <0001> Ku-axis ye-off <0001> off 4°	Ku-eksisi <0001> Ku-axis ye-off <0001> off 4°
Ukungazweli 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
I-Micropipe Density(MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
I-TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Umnsalo / Warp 翘曲度	≤25 μm	≤25 μm
Ubuso 表面处理	I-DSP/SSP	I-DSP/SSP
Ibanga 产品等级	Ibanga lokukhiqiza / locwaningo	Ibanga lokukhiqiza / locwaningo
I-Crystal Stacking Sequence 堆积方式	I-ABCB	ABCABC
Ipharamitha ye-Lattice 晶格参数	a=3.076A , c=10.053A	a=3.073A , c=15.117A
Isb/eV(Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε (Dielectric Constant) 介电常数	9.6	9.66
I-Refraction Index 折射率	n0 =2.719 ne =2.777	n0 =2.707 , ne =2.755

Imininingwane ye-6H-SiC Silicon Carbide substrate

Into项目	Imininingwane参数
I-Polytype 晶型	6H-SiC
Ububanzi 晶圆直径	4 intshi \|6inch
Ubukhulu 厚度	350μm ~ 450μm
I-Conductivity 导电类型	N – uhlobo / Semi-insulating N型导电片/ 半绝缘片
I-Dopant 掺杂剂	I-N2(Nitrogen) V (Vanadium)
Ukuqondisa 晶向	<0001> yephule ku-4°± 0.5°
Ukungazweli 电阻率	0.02 ~ 0.1 ohm-cm (Uhlobo lwe-6H-N)
I-Micropipe Density(MPD) 微管密度	≤ 10/cm2
I-TTV 总厚度变化	≤ 15 μm
Umnsalo / Warp 翘曲度	≤25 μm
Ubuso 表面处理	Si ubuso: CMP, Epi-Ready C Ubuso: I-Optical Polish
Ibanga 产品等级	Ibanga locwaningo