Izingxenye ze-Silicon nitride semiconductor ceramic

Izingxenye ze-Silicon nitride semiconductor zobumba Isithombe esifakiwe

Incazelo emfushane:

I-Silicon nitride iyi-ceramic empunga enokuqina okuphezulu kokuphuka, ukumelana nokushisa okuhle kakhulu, kanye nezakhiwo ezingenakungeneka ezinsimbi ezincibilikisiwe.

Isebenzisa lezi zici, isetshenziswa ezingxenyeni zenjini evuthayo yangaphakathi njengezingxenye zenjini yemoto, imibhobho ye-blowpipe yomshini wokushisela, njll., ikakhulukazi izingxenye ezidinga ukusetshenziswa ezindaweni ezinokhahlo njengokushisa ngokweqile.

Ngokumelana kwayo nokugqokwa okuphezulu namandla amakhulu emishini, ukusetshenziswa kwayo ekuthwaleni izingxenye ze-roller, ama-shaft bearings ajikelezayo kanye nezingxenye ezisele zemishini yokukhiqiza i-semiconductor zikhula njalo.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon nitride iyi-ceramic empunga enokuqina okuphezulu kokuphuka, ukumelana nokushisa okuhle kakhulu, kanye nezakhiwo ezingenakungeneka ezinsimbi ezincibilikisiwe.

Izakhiwo ze-silicon nitride ceramics

I-1, inamandla aphezulu ebangeni elikhulu lokushisa;

2, ukuphuka okuphezulu kokuqina;

3, amandla amahle okugoba;

4, ukumelana nokukhathala kwemishini nokukhasa;

5, ukukhanya - ukuminyana okuphansi;

6, ubulukhuni obuphezulu nokumelana nokugqoka;

I-7, ukumelana nokushaqeka okuhle kakhulu kokushisa;

8, ukwanda okushisayo okuphansi;

9, isivikelo sikagesi;

10, ukumelana okuhle kwe-oxidation;

I-11, ukumelana nokugqwala kwamakhemikhali okuhle.

I-silicon nitride ceramics ine-coefficient ephansi yokwandisa okushisayo kanye ne-thermal conductivity ephezulu, ngakho-ke inokumelana nokushaqeka kokushisa okuhle kakhulu.I-silicon nitride ecindezelwe ngokushisayo ngeke iphuke ngemva kokushiswa ibe ngu-1000 ℃ futhi ifakwe emanzini abandayo.Ezingeni lokushisa elingekho phezulu kakhulu, i-silicon nitride inamandla amakhulu kanye nokumelana nomthelela, kodwa ngaphezu kuka-1200 ℃ izolimala ngokukhula kwesikhathi sokusetshenziswa, ukuze amandla ayo anciphe, athambekele ekulimaleni kokukhathala ngaphezu kuka-1450 ℃, ngakho ukusetshenziswa izinga lokushisa le-Si3N4 ngokuvamile alidluli ku-1300℃.