Incazelo
I-Wafer CarriersngeI-Silicon Carbide (SiC) Coatingkusuka ku-semicera yakhelwe ngobuchwepheshe ukukhula kwe-epitaxial esebenza kahle, iqinisekisa imiphumela emihleI-EpitaxyfuthiI-SiC Epitaxyizicelo. Izinkampani zenethiwekhi ezinembile ze-Semicera zakhelwe ukumelana nezimo ezimbi kakhulu, zizenze izingxenye ezibalulekile ezinhlelweni ze-MOCVD Susceptor ezimbonini ezidinga ukunemba okuphezulu nokuqina.
Lezi zithwali ze-wafer ziyahlukahluka, zisekela izinqubo ezibucayi ngemishini efanaI-PSS Etching Inkampani yenethiwekhi, I-ICP Etching Carrier, futhiInkampani yenethiwekhi ye-RTP. I-SiC Coating yabo eqinile ithuthukisa ukusebenza kwezinhlelo zokusebenza ezifanaI-LED EpitaxialI-Susceptor ne-Monocrystalline Silicon, iqinisekisa imiphumela engaguquki ngisho nasezindaweni ezinzima.
Kutholakala ekucushweni okuningi, okufana ne-Barrel Susceptor kanye ne-Pancake Susceptor, laba bathwali badlala indima ebalulekile ekwenziweni kwe-photovoltaic ne-semiconductor, ukusekela ukukhiqizwa kwe-Photovoltaic Parts kanye nokwenza lula i-GaN kuzinqubo ze-SiC Epitaxy. Ngokuklama kwazo okuphezulu, lezi zinkampani zenethiwekhi ziyimpahla ebalulekile yabakhiqizi abahlose ukukhiqiza okusezingeni eliphezulu.
Izici Eziyinhloko
1 .Ukuhlanzeka okuphezulu kwe-SiC ehlanganiswe ne-graphite
2. Ukumelana nokushisa okuphezulu & ukufana okushisayo
3. KuhleI-SiC crystal coatedindawo ebushelelezi
4. Ukuqina okuphezulu ngokumelene nokuhlanza amakhemikhali
Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:
| I-SiC-CVD | ||
| Ukuminyana | (g/cc) | 3.21 |
| Amandla e-Flexural | (Mpa) | 470 |
| Ukunwetshwa kwe-thermal | (10-6/K) | 4 |
| I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha Nokuthumela
Ikhono Lokuhlinzeka:
10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:
| Ubuningi(Izingcezu) | 1-1000 | > 1000 |
| Est. Isikhathi(izinsuku) | 30 | Kuzoxoxiswana |
