China Wafer Manufacturers, Suppliers, Factory
Iyini i-wafer ye-semiconductor?
I-wafer ye-semiconductor ucezu oluncane oluyindilinga lwe-semiconductor olusebenza njengesisekelo sokwenziwa kwamasekhethi ahlanganisiwe (ama-IC) nezinye izinto zikagesi. I-wafer inikeza indawo eyisicaba futhi efanayo lapho kwakhiwe khona izingxenye ezihlukahlukene ze-elekthronikhi.
Inqubo yokukhiqiza iwafa ibandakanya izinyathelo ezimbalwa, okuhlanganisa ukukhulisa ikristalu eyodwa enkulu yezinto ezifiswayo ze-semiconductor, ukusika ikristalu ibe amawafa amancane kusetshenziswa isaha ledayimane, bese ukupholishwa nokuhlanza amawafa ukuze kususwe noma yikuphi ukonakala okungaphezulu noma ukungcola. Ama-wafers avelayo anendawo eyisicaba futhi ebushelelezi, okubalulekile ezinqubweni zokwenziwa ezilandelayo.
Uma ama-wafer eselungisiwe, angena uchungechunge lwezinqubo zokukhiqiza ama-semiconductor, njenge-photolithography, i-etching, deposition, kanye ne-doping, ukudala amaphethini ayinkimbinkimbi nezingqimba ezidingekayo ukuze kwakhiwe izingxenye ze-elekthronikhi. Lezi zinqubo ziphindaphindiwe izikhathi eziningi ku-wafer eyodwa ukuze kwakhiwe amasekhethi amaningi ahlanganisiwe noma amanye amadivaysi.
Ngemuva kokuthi inqubo yokwenziwa isiqediwe, ama-chips ngamanye ahlukaniswa ngokudayela i-wafer emigqeni echazwe ngaphambilini. Ama-chips ahlukanisiwe abe esepakishwa ukuze awavikele futhi ahlinzeke ngokuxhunywa kukagesi ukuze ahlanganiswe emishinini kagesi.
Izinto ezihlukile ku-wafer
Ama-wafers we-semiconductor enziwa ngokuyinhloko nge-silicon ye-crystal eyodwa ngenxa yobuningi bayo, izakhiwo zikagesi ezinhle kakhulu, nokuhambisana nezinqubo zokukhiqiza ezijwayelekile ze-semiconductor. Kodwa-ke, ngokuya ngezicelo nezidingo ezithile, ezinye izinto zingasetshenziswa ukwenza ama-wafers. Nazi izibonelo:
I-Silicon carbide (SiC) iyimpahla ye-semiconductor ebanzi ye-bandgap enikeza izakhiwo eziphakeme zomzimba uma kuqhathaniswa nezinto zendabuko. Isiza ukunciphisa usayizi nesisindo samadivayisi ahlukene, amamojula, ngisho nezinhlelo zonke, kuyilapho kuthuthukisa ukusebenza kahle.
Izici ezibalulekile ze-SiC:
- - I-Bandgap ebanzi:Ibhendi yeSiC icishe iphindwe kathathu kune-silicon, eyivumela ukuthi isebenze emazingeni okushisa aphezulu, afinyelela ku-400°C.
- -Inkambu Yokuhlukaniswa Okubalulekile:I-SiC ingamelana izikhathi eziphindwe kashumi kunenkundla kagesi ye-silicon, iyenze ilungele amadivayisi asebenzisa amandla kagesi aphezulu.
- - High Thermal Conductivity:I-SiC ihlakaza kahle ukushisa, isiza amadivayisi ukuthi agcine amazinga okushisa alungile okusebenza futhi andise ubude bempilo yawo.
- -High Saturation Electron Drift Velocity:Ngokuphindwe kabili isivinini sokukhukhuleka se-silicon, i-SiC inika amandla amaza okushintsha aphezulu, isiza ekwenzeni i-miniaturization yedivayisi.
Izicelo:
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-Amandla kagesi:Amadivayisi kagesi e-SiC ahamba phambili ku-high-voltage, high-current, high-temperature, kanye nezindawo zamafrikhwensi aphezulu, okuthuthukisa ngokuphawulekayo ukuguqulwa kwamandla. Zisetshenziswa kakhulu ezimotweni zikagesi, iziteshi zokushaja, izinhlelo ze-photovoltaic, ezokuthutha ngololiwe, kanye namagridi ahlakaniphile.
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-Microwave Communications:Amadivayisi e-SiC-based GaN RF abalulekile kwingqalasizinda yokuxhumana engenantambo, ikakhulukazi eziteshini eziyisisekelo ze-5G. Lawa madivayisi ahlanganisa ukusebenza kahle okushisayo kwe-SiC nokuphuma kwe-RF ye-GaN ephezulu, amandla aphezulu, okuwenza abe yinketho ekhethwayo yamanethiwekhi ocingo esizukulwane esilandelayo.
I-Gallium nitride (GaN)isizukulwane sesithathu esibanzi se-bandgap semiconductor impahla ene-bandgap enkulu, izinga eliphezulu le-thermal conductivity, i-electron ephezulu saturation drift velocity, nezici ezinhle kakhulu zenkambu yokwehlukana. Imishini ye-GaN inamathemba abanzi okusebenza ezindaweni ezinemvamisa ephezulu, isivinini esikhulu, nezinamandla amakhulu njengezibani ze-LED zokonga amandla, izibonisi ze-laser projection, izimoto zikagesi, amagridi ahlakaniphile, nokuxhumana kwe-5G.
I-Gallium arsenide (GaAs)iyimpahla ye-semiconductor eyaziwa ngokuvama kwayo okuphezulu, ukuhamba kwe-electron ephezulu, ukuphuma kwamandla aphezulu, umsindo ophansi, kanye nomugqa omuhle. Isetshenziswa kabanzi ezimbonini ze-optoelectronics kanye ne-microelectronics. Ku-optoelectronics, ama-substrates e-GaAs asetshenziselwa ukukhiqiza i-LED (ama-diode akhipha ukukhanya), i-LD (ama-laser diode), namadivayisi we-photovoltaic. Kuma-microelectronics, baqashwe ekukhiqizeni ama-MESFET (ama-metal-semiconductor field-effect transistors), ama-HEMT (ama-high electron mobility transistors), ama-HBT (i-heterojunction bipolar transistors), ama-IC (amasekhethi ahlanganisiwe), ama-microwave diode, namadivayisi we-Hall effect.
I-Indidium phosphide (InP)ingenye yamasemiconductors enhlanganisela ebalulekile ye-III-V, eyaziwa ngokuhamba kwayo okuphezulu kwama-electron, ukumelana okuhle kakhulu emisebeni, kanye ne-bandgap ebanzi. Isetshenziswa kabanzi ezimbonini ze-optoelectronics kanye ne-microelectronics.
