Isingeniso seSilicon Carbide Coating
I-Chemical Vapor Deposition (CVD) yethu ye-Silicon Carbide (SiC) iyisendlalelo esihlala isikhathi eside futhi esingagugi, esilungele izindawo ezidinga ukugqwala okuphezulu nokumelana nokushisa.I-Silicon Carbide coatingisetshenziswa ngezendlalelo ezincane kuma-substrates ahlukahlukene ngenqubo ye-CVD, enikeza izici zokusebenza eziphakeme.
Izici Eziyinhloko
● -Ukuhlanzeka Okukhethekile: Ukuziqhayisa ngokwakhiwa okumsulwa kwe99.99995%, wethuUkufakwa kwe-SiCinciphisa ubungozi bokungcola emisebenzini ebucayi ye-semiconductor.
● -Ukumelana Okuphakeme: Ibonisa ukumelana okuhle kakhulu kukho kokubili ukuguga nokugqwala, okuyenza ifaneleke kumakhemikhali ayinselele nezilungiselelo ze-plasma.
● -High Thermal Conductivity: Iqinisekisa ukusebenza okuthembekile ngaphansi kwezinga lokushisa elidlulele ngenxa yezakhiwo zayo ezishisayo ezivelele.
● -Ukuzinza kweDimensional: Igcina ubuqotho besakhiwo kulo lonke ibanga elibanzi lamazinga okushisa, sibonga i-coefficient yayo ephansi yokwandisa okushisayo.
● -Ukuqina Okuthuthukisiwe: Ngesilinganiso sobulukhuni be40 GPA, i-SiC yethu enamathelayo imelana nomthelela omkhulu kanye nokuhuzuka.
● -Smooth Surface Qeda: Inikeza isiphetho esifana nesibuko, inciphisa ukukhiqizwa kwezinhlayiya futhi ithuthukise ukusebenza kahle.
Izinhlelo zokusebenza
I-Semicera Izingubo ze-SiCasetshenziswa ezigabeni ezehlukene zokukhiqiza i-semiconductor, okuhlanganisa:
● -Ukwakhiwa kwe-chip ye-LED
● -Ukukhiqizwa kwePolysilicon
● -Ukukhula kwe-Crystal Semiconductor
● -I-Silicon ne-SiC Epitaxy
● -I-Thermal Oxidation and Diffusion (TO&D)
Sihlinzeka ngezinto ezinamekwe nge-SiC ezakhiwe ngegraphite ye-isostatic yamandla aphezulu, ikhabhoni eqiniswe yi-carbon fibre-reinforced carbon kanye ne-4N recrystallized silicon carbide, eklanyelwe ama-reactors afakwe umbhede,Iziguquli ze-STC-TCS, izibonisi zeyunithi ye-CZ, isikebhe se-SiC wafer, i-SiCwafer paddle, i-SiC wafer tube, nezithwali ze-wafer ezisetshenziswa ku-PECVD, i-silicon epitaxy, izinqubo ze-MOCVD.
Izinzuzo
● -Isikhathi Sempilo Esandisiwe: Yehlisa ngokuphawulekayo isikhathi sokuphumula semishini kanye nezindleko zokuyilungisa, ithuthukisa ukusebenza kahle kokukhiqiza kukonke.
● -Ikhwalithi Ethuthukisiwe: Ifinyelela ukuhlanzeka okuphezulu okudingekayo ekucutshungulweni kwe-semiconductor, ngaleyo ndlela kukhuphule ikhwalithi yomkhiqizo.
● -Ukwengeza Ukuphumelela: Ilungiselela izinqubo ezishisayo neze-CVD, okuholela ezikhathini zomjikelezo omfushane kanye nesivuno esiphezulu.
Imininingwane Yezobuchwepheshe
● -Isakhiwo: I-FCC β isigaba se-polycrystaline, ikakhulukazi (111)iqondiswe
● -Ukuminyana: 3.21 g/cm³
● -Ukuqina: 2500 Vickes ubulukhuni (500g umthwalo)
● -Ukuphuka Kokuqina: 3.0 MPa·m1/2
● -I-Thermal Expansion Coefficient (100–600 °C): 4.3 x 10-6k-1
● -I-Elastic Modulus(1300 ℃):435 I-GPa
● -Ukuqina Kwefilimu Okujwayelekile:100µm
● -Ukuqina Kobuso:2-10 µm
Idatha Yokuhlanzeka (Ikalwa Nge-Glow Discharge Mass Spectroscopy)
| Isici | ppm | Isici | ppm |
| Li | < 0.001 | Cu | < 0.01 |
| Be | < 0.001 | Zn | <0.05 |
| Al | < 0.04 | Ga | < 0.01 |
| P | < 0.01 | Ge | <0.05 |
| S | < 0.04 | As | < 0.005 |
| K | <0.05 | In | < 0.01 |
| Ca | <0.05 | Sn | < 0.01 |
| Ti | < 0.005 | Sb | < 0.01 |
| V | < 0.001 | W | <0.05 |
| Cr | <0.05 | Te | < 0.01 |
| Mn | < 0.005 | Pb | < 0.01 |
| Fe | <0.05 | Bi | <0.05 |
| Ni | < 0.01 |
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