Emkhakheni we-semiconductor, ukuzinza kwengxenye ngayinye kubaluleke kakhulu kuyo yonke inqubo. Kodwa-ke, endaweni enezinga eliphezulu lokushisa, i-graphite i-oxidized kalula futhi ilahleka, futhi ukugqoka kwe-SiC kunganikeza ukuvikeleka okuzinzile kwezingxenye ze-graphite. KweI-Semiceraithimba, sinemishini yethu yokucubungula ukuhlanzwa kwe-graphite, engalawula ukuhlanzeka kwegraphite ngaphansi kwe-5ppm. Ukuhlanzeka kwe-silicon carbide coating kungaphansi kwe-0.5 ppm.
✓Ikhwalithi ephezulu emakethe yaseChina
✓Isevisi enhle njalo kuwe, amahora angu-7*24
✓Idethi emfishane yokulethwa
✓I-MOQ encane yamukelekile futhi yamukelwe
✓Amasevisi angokwezifiso
I-Epitaxy Growth Susceptor
Amawafa e-silicon/silicon carbide adinga ukudlula ezinqubweni eziningi okufanele asetshenziswe kumishini kagesi. Inqubo ebalulekile i-silicon/sic epitaxy, lapho amawafa e-silicon/sic athwalwa khona ngesisekelo segraphite. Izinzuzo ezikhethekile ze-Semicera's silicone carbide-coated graphite base zifaka ukuhlanzeka okuphezulu kakhulu, ukunamathela okufanayo, nempilo yesevisi ende kakhulu. Futhi banokuphikiswa okuphezulu kwamakhemikhali kanye nokuzinza kokushisa.
Ukukhiqizwa kwe-chip ye-LED
Ngesikhathi sokumbozwa okubanzi kwe-reactor ye-MOCVD, isisekelo seplanethi noma umthwali uhambisa i-wafer ye-substrate. Ukusebenza kwezinto eziyisisekelo kunethonya elikhulu kwikhwalithi yokugqoka, okubuye kuthinte izinga le-scrap ye-chip. Isisekelo esihlanganiswe ne-silicon carbide se-Semicera sinyusa ukusebenza kahle kokukhiqizwa kwamawafa e-LED ekhwalithi ephezulu futhi sinciphisa ukuchezuka kwamaza. Siphinde sinikeze izingxenye ezengeziwe ze-graphite zazo zonke iziphehlisi ze-MOCVD ezisetshenziswayo njengamanje. Singakwazi ukugqoka cishe noma iyiphi ingxenye nge-silicon carbide coating, noma ngabe ububanzi bengxenye bufika ku-1.5M, sisengakwazi ukugqoka nge-silicon carbide.
Inkambu yeSemiconductor, Inqubo Yokusabalalisa Kwe-oxidation, njll.
Enqubweni ye-semiconductor, inqubo yokunwetshwa kwe-oxidation idinga ukuhlanzeka okuphezulu komkhiqizo, futhi kwa-Semicera sinikeza inkambiso nezinsizakalo zokumboza ze-CVD zeningi lezingxenye ze-silicon carbide.
Isithombe esilandelayo sibonisa udaka lwe-silicon carbide olucutshungulwe kahle lwe-Semicea kanye neshubhu le-silicon carbide furnace elihlanzwa ku-1000-izingaengenalo uthuliigumbi. Abasebenzi bethu basebenza ngaphambi kokugqoka. Ukuhlanzeka kwe-silicon carbide yethu kungafinyelela ku-99.99%, futhi ubumsulwa be-sic coating bukhulu kuno-99.99995%.