Ipuleti yenkampani ye-Silicon carbide RTA ye-semiconductor

Ipuleti le-Silicon carbide RTA yenkampani yenethiwekhi ye-semiconductor Isithombe Esifakiwe

Incazelo emfushane:

I-Silicon carbide iwuhlobo olusha lwe-ceramics olusebenza ngezindleko eziphakeme kanye nezakhiwo ezinhle kakhulu zezinto ezibonakalayo. Ngenxa yezici ezinjengamandla aphezulu nobulukhuni, ukumelana nokushisa okuphezulu, ukuguquguquka okukhulu kokushisa kanye nokumelana nokubola kwamakhemikhali, i-Silicon Carbide icishe imelane nayo yonke into yamakhemikhali. Ngakho-ke, i-SiC isetshenziswa kabanzi ezimayini zikawoyela, amakhemikhali, imishini kanye ne-airspace, ngisho namandla enuzi kanye nezempi zinezidingo zabo ezikhethekile ku-SIC. Olunye uhlelo olujwayelekile esingalunikeza izindandatho zophawu lwepompo, i-valve nezikhali zokuvikela njll.

Siyakwazi ukuklama nokwenza ngokuvumelana nobukhulu bakho obuthile ngekhwalithi enhle nesikhathi sokuletha esinengqondo.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.

Izici Eziyinhloko

1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu : okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

Izakhiwo ze-SiC-CVD
Isakhiwo Sekristalu	I-FCC β isigaba
Ukuminyana	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Usayizi Wokusanhlamvu	μm	2~10
I-Chemical Purity	%	99.99995
Amandla Okushisa	J·kg-1 ·K-1	640
I-Sublimation Temperature	℃	2700
Amandla E-Felexural	I-MPa (RT 4-point)	415
I-Modulus Encane	I-Gpa (4pt bend, 1300℃)	430
I-Thermal Expansion (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300