I-Semicera'sIzigwedlo ze-SiCzenzelwe ukunwetshwa okushisayo okuncane, okuhlinzeka ukuzinza nokunemba ezinqubweni lapho ukunemba kobukhulu kubalulekile. Lokhu kubenza balungele izicelo laphoizinkwa eziwucwecwezingaphansi kwemijikelezo yokufudumeza nokupholisa ephindaphindiwe, njengoba isikebhe esicwecwana sigcina ubuqotho baso besakhiwo, siqinisekisa ukusebenza okungaguquki.
Ihlanganisa i-Semicera'si-silicon carbide diffusion paddlesemgqeni wakho wokukhiqiza kuzothuthukisa ukwethembeka kwenqubo yakho, ngenxa yezakhiwo zazo ezishisayo namakhemikhali aphezulu. Lawa ma-paddles alungele ukusabalalisa, i-oxidation, nezinqubo zokudonsa, okuqinisekisa ukuthi ama-wafers aphathwa ngokucophelela nangokunemba kuso sonke isinyathelo.
Ukuqamba okusha kusemongweni we-Semicera'sIsigwedlo se-SiCumklamo. Lawa ma-paddles enzelwe ukuthi alingane kalula nezinto zokusebenza ze-semiconductor ekhona, ehlinzeka ngokusebenza okuthuthukisiwe kokuphatha. Isakhiwo esingasindi kanye nokwakheka kwe-ergonomic akuthuthukisi nje kuphela ezokuthutha eziyilucwecwana kodwa futhi kunciphisa isikhathi sokuphumula sokusebenza, okuholela ekukhiqizweni okulula.
Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide | |
Impahla | Inani Elijwayelekile |
Izinga lokushisa lokusebenza (°C) | 1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo) |
Okuqukethwe kwe-SiC | > 99.96% |
Mahhala Si okuqukethwe | < 0.1% |
Ukuminyana ngobuningi | 2.60-2.70 g/cm3 |
I-porosity ebonakalayo | < 16% |
Amandla okucindezela | > 600 MPa |
Amandla okugoba abandayo | 80-90 MPa (20°C) |
Amandla okugoba ashisayo | 90-100 MPa (1400°C) |
Ukunwetshwa kwe-Thermal @1500°C | 4.70 10-6/°C |
I-Thermal conductivity @1200°C | 23 W/m•K |
I-Elastic module | 240 GPA |
Ukumelana nokushaqeka okushisayo | Kuhle ngokwedlulele |